Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
Year: 2010
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.3525834
Institutions: Tokyo Institute of Technology, NTT (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2087523954