Boron profile changes during low-temperature annealing of BF+2-implanted silicon
Year: 1988
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.100505
Authors: Yudong Kim, Hisham Z. Massoud, Richard B. Fair
Institution: Duke University
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2088081281