Work

Thermoelectric Properties of Ni Doped P-Type BiCuSeO Oxyselenides

Year: 2014

Type: article

Abstract: We report on the effect of Ni doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu2Se2)2-layers alternately stacked with insulating (Bi2O2)2+layers along c axis. After doping with Ni, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to a power factor of ~231 μwm-1K-2at 873 K. Coupled to low thermal conductivity, ZT at 873 K is increased from 0.35 for pristine BiCuSeO to 0.39 for Bi0.95Ni0.05CuSeO. However, the efficiency of Ni doping in the insulating (Bi2O2)2+layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Ni doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr, Ba and Pb doped BiCuSeO.

Source: Key engineering materials

DOI: 10.4028/www.scientific.net/kem.602-603.906

Authors: Yao Chun Liu, Jun Fu Liu, Bo Ping Zhang, Yuan Hua Lin

Institutions: University of Science and Technology Beijing, Beijing Normal University, Tsinghua University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

OpenAlex ID: W2088094639

FWCI: 0.269

Cites: 22

Cited by: 5

Related to: 10