Work

Enhanced optical output power of InGaN/GaN vertical light-emitting diodes by ZnO nanorods on plasma-treated N-face GaN

Year: 2014

Type: article

Source: Nanoscale

DOI: 10.1039/c4nr01503g

Authors: Young-Chul Leem, Na-Yeong Kim, Wantae Lim, Sung-Tae Kim, Seong-Ju Park

Institutions: Gwangju Institute of Science and Technology, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2088520768

FWCI: 1.294

Cites: 48

Cited by: 11

Related to: 10