Year: 2003
Type: article
Abstract: Anode materials of nanostructured silicon have been prepared by physical vapor deposition and characterized using electrochemical methods. The electrodes were prepared in thin-film form as nanocrystalline particles (12 nm mean diameter) and as continuous amorphous thin films (100 nm thick). The nanocrystalline silicon exhibited specific capacities of around 1100 mAh/g with a 50% capacity retention after 50 cycles. The amorphous thin-film electrodes exhibited initial capacities of 3500 mAh/g with a stable capacity of 2000 mAh/g over 50 cycles. We suggest that the nanoscale dimensions of the silicon circumvents conventional mechanisms of mechanical deterioration, permitting good cycle life. © 2003 The Electrochemical Society. All rights reserved.
DOI: 10.1149/1.1596917
Authors: J. Graetz, C. C. Ahn, R. Yazami, B. Fultz
Institution: California Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2090810785