Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics
Year: 2014
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4887368
Institution: Centre National de la Recherche Scientifique
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2091353561