Year: 1992
Type: article
Abstract: Low-resistivity p-type GaN films were obtained by N 2 -ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1×10 6 Ω·cm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 Ω·cm, 3×10 17 /cm 3 and 10 cm 2 /V·s, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°C of thermal annealing.
DOI: 10.1143/jjap.31.l139
Institution: Nichia Corporation (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2091446565