Work

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

Year: 2013

Type: article

Abstract: Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me = W, Mo; X = Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X = S, Se) as the p-type drain by density functional theory calculations.

Source: Applied Physics Letters

DOI: 10.1063/1.4817409

Authors: Cheng Gong, Hengji Zhang, Weihua Wang, Luigi Colombo, Robert M. Wallace, Kyeongjae Cho

Institutions: The University of Texas at Dallas, Texas Instruments (United States)

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Semiconductor Research Corporation, Ministry of Science, ICT and Future Planning, National Research Foundation of Korea, Defense Advanced Research Projects Agency

Awards: G3149229320, G6347947730