Work

Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

Year: 2010

Type: article

Abstract: We demonstrate atomic layer deposition of high-quality dielectric ${\mathrm{HfO}}_{2}$ films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these ${\mathrm{HfO}}_{2}$-covered graphene samples reaches $20\text{ }000\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\text{ }\mathrm{s}$ at low temperature. Distinct contributions to the resistivity from surface optical phonons in the ${\mathrm{SiO}}_{2}$ substrate and the ${\mathrm{HfO}}_{2}$ overlayer are isolated. At 300 K, surface phonon modes of the ${\mathrm{HfO}}_{2}$ film centered at 54 meV limit the mobility to approximately $20\text{ }000\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\text{ }\mathrm{s}$.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.105.126601

Authors: K. Zou, X. Hong, D. Keefer, J. Zhu

Institutions: Pennsylvania State University, Beloit College

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, Division of Materials Research

Awards: CAREER: Mesoscopic Phenomena and Band-Structure Engineering in Single-Layer and Bilayer Graphene, NIRT: Electronic and Mechanical Devices from Graphene Films, NNIN: National Nanotechnology Infrastructure Network, G6711204355