Work

Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals

Year: 2010
Type: article
Abstract: While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of ${\text{Bi}}_{2}{\text{Se}}_{3}$, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of ${\text{Bi}}_{2}{\text{Se}}_{3}$ with carrier densities approaching ${10}^{16}\text{ }{\text{cm}}^{\ensuremath{-}3}$ and very high mobilities exceeding $2\text{ }{\text{m}}^{2}\text{ }{\text{V}}^{\ensuremath{-}1}\text{ }{\text{s}}^{\ensuremath{-}1}$ have been studied. A comprehensive analysis of Shubnikov-de Haas oscillations, Hall effect, and optical reflectivity indicates that the measured electrical transport can be attributed solely to bulk states, even at 50 mK at low Landau-level filling factor, and in the quantum limit. The absence of a significant surface contribution to bulk conduction demonstrates that even in very clean samples, the surface mobility is lower than that of the bulk, despite its topological protection.
Language: English
Open Access status: green
OpenAlex ID: W2093105255
FWCI: 26.02
Cites: 22
Cited by: 428
Related to: 10