The mechanical properties of polycrystalline 3C-SiC films grown on polysilicon substrates by atmospheric pressure chemical-vapor deposition
Year: 2006
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.2169875
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2093373347
