Work

Temperature dependence of the band gap of silicon

Year: 1974

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1663501

Authors: W. Bludau, A. Onton, W. Heinke

Institutions: Max Planck Institute for Solid State Research, Wacker Group (Germany)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2094087345

FWCI: 7.396

Cites: 9

Cited by: 601

Related to: 10