Work

Comprehensive numerical modeling of vertical-cavity surface-emitting lasers

Year: 1996

Type: article

Abstract: We present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes affecting cw operation of axisymmetric devices. In particular, our model includes a description of the 2-D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation.

Source: IEEE Journal of Quantum Electronics

DOI: 10.1109/3.488833

Authors: G.R. Hadley, K.L. Lear, M.E. Warren, K.D. Choquette, J.W. Scott, S.W. Corzine

Institutions: Sandia National Laboratories, Hewlett-Packard (United States), University of California, Santa Barbara

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: U.S. Department of Energy

Awards: G194215011, G8456466421