Work

Low-power, 2×2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks

Year: 2009

Type: article

Abstract: We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off' switching states over an optical bandwidth of 110 nm, owing to the implementation of broadband 50% couplers. Full 2 x 2 switching functionality is demonstrated, with low power consumption (approximately 3 mW) and a fast switching time (< 4 ns). The utilization of standard CMOS metallization results in a low drive voltage (approximately 1 V) and a record-low V(pi)L (approximately 0.06 V x mm). The wide optical bandwidth is maintained for temperature variations up to 30 K.

Source: Optics Express

DOI: 10.1364/oe.17.024020

Authors: Joris Van Campenhout, William M. Green, Solomon Assefa, Yurii A. Vlasov

Institutions: IBM (United States), IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: gold

Estimated APC paid: $2,270