Effects of Al-Doping on the Thermoelectric Properties of ZnO:Al Thin Films
Year: 2014
Type: article
Abstract: Zn1-xAlxO (AZO,x=0, 1.2, 2.1, 2.8 and 3.8 at.%) films were deposited on glass substrates at room-temperature by magnetron sputtering using Zn-Al alloy target. The influence of Al-doping on the thermoelectric properties of AZO films was systematically investigated. It was found that the electrical conductivity at room temperature increased from ~450 S/m (undoped ZnO) to 5.7×104S/m (Zn0.979Al0.021O). The Seebeck coefficient of Zn0.972Al0.028O and Zn0.979Al0.021O film increased stably with the increase of temperature from room temperature up to 300 °C. The power factor of Zn0.972Al0.028O thin film increased significantly with increasing of temperature and reached a maximum value of 17.9×10-5Wm-1K-2at 300 °C, which was about three times larger than that of undoped ZnO films.
Source: Advanced materials research
Institution: Shenzhen University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2094906728