Work

Short channel n-MOS devices via combined e-beam and photolithographic processing

Year: 1979

Type: article

Source: Journal of Vacuum Science and Technology

DOI: 10.1116/1.570264

Authors: R. C. Henderson, J. G. Nash

Institution: HRL Laboratories (United States)

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2095014874

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