Work

Relationship between resistivity and total arsenic concentration in heavily doped n - and p -type silicon

Year: 1973

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1661874

Authors: Richard B. Fair, Gary R. Weber

Institution: AT&T (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2095458270

FWCI: 1.252

Cites: 7

Cited by: 14

Related to: 10