Work

Si/InGaN Core/Shell Hierarchical Nanowire Arrays and their Photoelectrochemical Properties

Year: 2012

Type: article

Abstract: Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays increased by 5 times compared to the photocurrent density with InGaN nanowire arrays grown on planar Si (1.23 V vs RHE). High-resolution transmission electron microscopy showed that InGaN nanowires are stable after 15 h of illumination. These measurements show that Si/InGaN hierarchical nanostructures are a viable high surface area electrode geometry for solar water splitting.

Source: Nano Letters

DOI: 10.1021/nl3001138

Authors: Yun Jeong Hwang, Cheng Hao Wu, Chris Hahn, Hoon Eui Jeong, Peidong Yang

Institutions: Lawrence Berkeley National Laboratory, University of California, Berkeley

Language: English

Topic: Advanced Photocatalysis Techniques

Subfield: Renewable Energy, Sustainability and the Environment

Field: Energy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: green

Funders: U.S. Department of Energy, Office of Science, Basic Energy Sciences