Work

Analysis of Current-Voltage characteristics of AlGaN/GaN HEMTs with a Stair-Type Gate structure

Year: 2010

Type: article

Source: 전자공학회논문지-SD

Authors: 김동호, 정강민, 김태근

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2098291540

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Related to: 10