Work

Control of the Figure of Merit by the Anti-site Defect in Thermoelectric Materials (Bi,Sb)2Te3

Year: 2003

Type: article

Abstract: Basic physical properties of the thermoelectric materials of p-type (Bi,Sb) 2 Te 3 have been measured. The temperature T Z-peak , at which the figure of merit Z takes a maximum, the resistivity and the Seebeck coefficient show the linear Hall coefficient dependences. These behaviors are strongly related to the anti-site defect between the Bi (or Sb) and the Te site and the T Z-peak systematically decreases with the decrease of the anti-site defect which corresponds to the decrease of the number of hole carriers. It is proposed that the figure of merit could be controlled by the anti-site defect. A possibility of the application of the thermoelectric materials at low temperature is also proposed.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.42.5477

Authors: Hideo Iwasaki, Akihiro Ohishi, Takeshi Kajihara, Seijirou Sano

Institutions: Japan Advanced Institute of Science and Technology, Komatsu (Japan)

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2099145338

FWCI:

Cites: 1

Cited by: 7

Related to: 10