Year: 2004
Type: article
Abstract: Ultralow leakage current through nitrided gate oxides on 4H SiC is investigated by a novel technique in this paper. The technique utilizes capacitance-voltage (C-V) measurements to characterize the relaxation of nonequilibrium capacitance due to charge leakage in floating-gate metal-oxide-semiconductor capacitors. The C-V measurements are performed at elevated temperatures and the results are extrapolated to room temperature. The obtained values for the relaxation times are in the order of 10/sup 13/ s for MOS capacitors on both n-type and p-type 4H SiC.
Authors: K.Y. Cheong, S. Dimitrijev, J. Han
Institutions: Universiti Sains Islam Malaysia, Griffith University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2099579241