Work

Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

Year: 2011

Type: article

Abstract: We report the integration of GalnAsSb p-i-n photo diodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 μA at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 μm. This yields 1.63 × 109cmHz1/2/W of Johnson-noise-limited-detectivity.

Source: IEEE Photonics Technology Letters

DOI: 10.1109/lpt.2011.2169244

Authors: Nannicha Hattasan, Alban Gassenq, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournie, Gunther Roelkens

Institutions: Ghent University, IMEC, Institut d'Électronique et des Systèmes, Centre National de la Recherche Scientifique, Université Montpellier 2

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2101973775

FWCI: 2.817

Cites: 14

Cited by: 39

Related to: 10