Work

Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

Year: 2013

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2013.2259260

Author: D. M. Fleetwood

Institution: Vanderbilt University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2102327177

FWCI: 11.34

Cites: 208

Cited by: 387

Related to: 10