Work

Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxy

Year: 1981

Type: article

Source: Journal of Vacuum Science and Technology

DOI: 10.1116/1.571138

Authors: P. D. Kirchner, J. M. Woodall, J. L. Freeouf, D. J. Wolford, G. D. Pettit

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2102695194

FWCI: 2.588

Cites:

Cited by: 24

Related to: 10