Modeling boron diffusion in thin-oxide p/sup +/ Si gate technology
Year: 1996
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.541760
Authors: R.B. Fair, R.A. Gafiteanu
Institution: Duke University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2102995695