Work

Magnetoresistive random access memory using magnetic tunnel junctions

Year: 2003

Type: article

Source: Proceedings of the IEEE

DOI: 10.1109/jproc.2003.811804

Authors: S. Tehrani, J.M. Slaughter, M. Deherrera, B.N. Engel, N.D. Rizzo, J. Salter, M. Durlam, R.W. Dave, J. Janesky, B. Butcher, K. Smith, G. Grynkewich

Institution: Motorola (United States)

Language: English

Topic: Magnetic properties of thin films

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2103214300

FWCI: 22.23

Cites: 44

Cited by: 416

Related to: 10