Work

Angular effects in proton-induced single-event upsets in silicon-on-sapphire and silicon-on-insulator devices

Year: 2005

Type: conference-paper

Abstract: We present new data in the ongoing effort to bound the effect of proton angle of incidence on the single-event upset (SEU) rate in silicon-on-sapphire (SOS) and silicon-on-insulator (SOI) devices.

Source: IEEE Radiation Effects Data Workshop (REDW)

DOI: 10.1109/redw.2004.1352916

Authors: S.D. Kniffin, J.F. McCabe, G.A. Gardner, J. Lintz, C. Ross, K. Golke, B. Bums, A.B. Sanders, R.A. Reed, K.A. LaBel, P.W. Marshall, S.T. Liu, H.S. Kim, J.D. Forney, C.J. Tabbert, M.A. Carts, J.W. Swonger

Institutions: Orbital Sciences (United States), Goddard Space Flight Center, Honeywell (United States), Jackson and Tull (United States), Raytheon (United States)

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: National Aeronautics and Space Administration, Defense Threat Reduction Agency, University of California, Davis

OpenAlex ID: W2103363493

FWCI:

Cites: 3

Cited by: 7

Related to: 10