Work

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

Year: 2013

Type: article

Abstract: Understanding fundamental atomic migration characteristics of multicomponent chalcogenide materials such as GeSbTe (GST) and BiTe are important in order to investigate the failure mechanism related to the electrical reliability of thermoelectric materials under high current density. In this work, high current density effect on the in-situ atomic migration characteristics of the BiTe thermoelectric thin films was conducted by real-time observation inside an scanning electron microscope chamber. Under the high current density conditions ranging from 0.83×106 to 1.0×106 A/cm2 at 100 °C, Te migrated toward the cathode, and Bi migrated toward the anode because the electrostatic force was dominant by very high Joule heating effect.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.52.10mc06

Authors: Seunghyun Kim, Yong-Jin Park, Young-Chang Joo, Young-Bae Park

Institutions: Gyeongkuk National University, Seoul National University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze