Work

A Novel Enhanced Electric-Field Impact-Ionization MOS Transistor

Year: 2010

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2010.2066541

Authors: Deblina Sarkar, Navab Singh, Kaustav Banerjee

Institutions: University of California, Santa Barbara, Agency for Science, Technology and Research, Institute of Microelectronics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2104186890

FWCI: 0.757

Cites: 22

Cited by: 32

Related to: 10