Work

Optimization of lightly doped drain MOSFETs using a new quasiballistic simulation tool

Year: 1984

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1984.190840

Authors: C. Werner, R. Kuhnert, L. Risch

Institution: Siemens (Germany)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2104646562

FWCI: 3.822

Cites: 5

Cited by: 13

Related to: 10