Work

Counter doping into uniformly and heavily doped channel region of sub-0.1 μm SOI MOSFETs

Year: 1996

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/55.475558

Authors: K. Suzuki, A. Satoh, T. Sugii

Institution: Fujitsu (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2105605183

FWCI: 2.909

Cites: 3

Cited by: 13

Related to: 10