Work

Photon-beam lithography reaches 12.5nm half-pitch resolution

Year: 2007

Type: article

Abstract: We have printed dense line/space patterns with half-pitches as small as 12.5nm in a negative-tone calixarene resist using extreme ultraviolet (EUV) interference lithography. The EUV interference setup which is based on transmission diffraction gratings is illuminated with spatially coherent radiation from a synchrotron source. The results show the extendibility of EUV lithography to printing features measuring less than 15nm in size. We discuss the potential impact of effects such as photoelectron blur and shot noise in high-resolution EUV lithography.

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.2401612

Authors: Harun H. Solak, Yasin Ekinci, Philipp Käser, Sunggook Park

Institutions: Paul Scherrer Institute, Louisiana State University

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Paul Scherrer Institut

OpenAlex ID: W2105653011