Year: 2009
Type: article
Abstract: In contrast to graphene, which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the 2-D geometry, unique transport features of graphene, and the possibility of doping graphane, p and n regions can be defined so that 2-D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain the current-voltage characteristics of such a 2-D p-n junction based on graphane. As we show, within the approximation of Shockley's law of junctions, an ideal I-V characteristic for this p-n junction is to be expected.
Authors: Behnaz Gharekhanlou, Sina Khorasani
Institution: Sharif University of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2106085124