Work

RTS amplitudes in decananometer MOSFETs: 3-D simulation study

Year: 2003

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2003.811418

Authors: A. Asenov, R. Balasubramaniam, A.R. Brown, J.H. Davies

Institution: University of Glasgow

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2106482808

FWCI: 4.358

Cites: 25

Cited by: 261

Related to: 10