Work

Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well

Year: 2007

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/s11664-007-0210-9

Authors: Z. Yarar, B. Ozdemir, M. Ozdemir

Institutions: Mersin Üniversitesi, Cukurova University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2106857649

FWCI: 0.909

Cites: 74

Cited by: 18

Related to: 10