Work

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

Year: 2006

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2006.873381

Authors: N. Singh, A. Agarwal, L.K. Bera, T.Y. Liow, R. Yang, S.C. Rustagi, C.H. Tung, R. Kumar, G.Q. Lo, N. Balasubramanian, D.-L. Kwong

Institution: Institute of Microelectronics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2106998413

FWCI: 37.2

Cites: 24

Cited by: 662

Related to: 10