High‐power GaN‐HEMT with high three‐terminal breakdown voltage for W‐band applications
Work
Year: 2009
Type: article
Institution Fujitsu (Japan)
Cites:
Cited by: 23
Related to: 10
FWCI: 0.632
Citation percentile (by year/subfield): 77.53
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Sustainable Development Goal Affordable and clean energy
Open Access status: closed