Work

Thermoelectric Power-Generation Characteristics of a Thin-Film Device Processed by the Flip-Chip Bonding of Bi2Te3 and Sb2Te3 Thin-Film Legs Using an Anisotropic Conductive Adhesive

Year: 2015

Type: article

Abstract: A thermoelectric thin-film device with a cross-plane configuration was fabricated by the flip-chip process using an anisotropic conductive adhesive. The Cu/Au bumps on the top substrate were flip-chip bonded to the 242 pairs of the n-type Bi2Te3 and p-type Sb2Te3 thin-film legs electrodeposited on the bottom substrate. The internal resistance of the thin-film device was 59 Ω, most of which can be attributed to the interfacial resistance of the 484 flip-chip joints. The thin-film device exhibited an open-circuit voltage of 382 mV and a maximum output power of 652 µW for a temperature difference of 36.8 K applied across its top and bottom substrates.

Source: MATERIALS TRANSACTIONS

DOI: 10.2320/matertrans.m2015236

Authors: Kang-Je Shin, Tae-Sung Oh

Institution: Hongik University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

Funders: National Research Foundation, National Research Foundation of Korea