Work

Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime

Year: 1995

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/55.790731

Authors: A.J. Joseph, J.D. Cressler, D.M. Richey

Institution: Auburn University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2108976516

FWCI: 0.463

Cites: 9

Cited by: 47

Related to: 10