Determination of the gate-tunable band gap and tight-binding parameters in bilayer graphene using infrared spectroscopy
Year: 2009
Type: article
Abstract: We present a compelling evidence for the opening of a bandgap in exfoliated bottom-gated bilayer graphene by fitting the gate-voltage-modulated infrared reflectivity spectra in a large range of doping levels with a tight-binding model and the Kubo formula. A close quantitative agreement between the experimental and calculated spectra is achieved, allowing us to determine self-consistently the full set of Slonczewski-Weiss-McClure tight-binding parameters together with the gate-voltage-dependent bandgap. The doping dependence of the bandgap shows a good agreement with the existing calculations that take the effects of self-screening into account. We also identify certain mismatches between the tight-binding model and the data, which can be related to electron-electron and electron-phonon interactions.
Source: Physical Review B
Institutions: University of Geneva, University of Manchester
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2109076811