Year: 2005
Type: article
Abstract: Ferroelectric Bi 3.35 Sm 0.65 Ti₃O 12 (BSmT) thin films were synthesized by sol-gel process. In this experiments, Bi(TMHD)₃, Sm 5 (O i Pr) 13 , Ti(O i Pr)₄ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO x /SiO₂/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to 720℃ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at 720℃ were 19.48μC/㎠ and 3.40 V, respectively.
Authors: Kang, Dong-Kyun, Cho, Tae-Jin, Kim, Byong-Ho
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2109944680