Year: 1976
Type: article
Abstract: In a previous paper, the diffusion of ion-implanted As in <100> Si was discussed as well as the electrical quality of implanted-diffused layers.It is the purpose of this paper to derive equations that describe the important characteristic profile parameters, and to support these equations with experimental data.A discussion of total As surface concentration, junction depth, and profile gradient will be presented, which will be followed by an analysis of the sheet resistance of implanted-diffused As layers and the surface concentration of the electrically active As.
DOI: 10.1149/1.2132883
Authors: Richard B. Fair, Joseph C. C. Tsai
Institution: AT&T (United States)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2110632708