Work

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Year: 2001

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.936500

Authors: S. Karmalkar, U.K. Mishra

Institutions: Indian Institute of Technology Madras, University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2111051464

FWCI: 2.071

Cites: 13

Cited by: 477

Related to: 10