Work

Formation of Bismuth Nanocrystals in Bi2O3Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Year: 2014

Type: article

Abstract: Bismuth nanocrystals were embedded in amorphous Bi 2 O 3 thin films grown under a nitrogen atmosphere at room temperature using pulsed laser deposition. As-grown Bi 2 O 3 -Bi thin films showed a high electrical conductivity of approximately 769 S/cm at 320 K, and the samples annealed in two steps at 200 and 300°C consisted of amorphous Bi 2 O 3 , bismuth nanocrystals in the crystallized β-Bi 2 O 3 phase. The mixture phase of the bismuth nanocrystals and β-Bi 2 O 3 enhanced the thermoelectric properties at room temperature. Samples annealed in two steps at 200 and 300°C showed an electrical conductivity of 833 S/cm, a Seebeck coefficient of –110 μV/K, a power factor of about 1.05 × 10 −3 W/K 2 m. Formation of the bismuth nanocrystals in Bi 2 O 3 thin films at low temperature made thermoelectric applications possible.

Source: ECS Journal of Solid State Science and Technology

DOI: 10.1149/2.0101410jss

Authors: Ji-Ho Eom, Hyun-June Jung, Jun-Hee Han, Jeong-Yong Lee, Soon-Gil Yoon

Institutions: Chungnam National University, Korea Advanced Institute of Science and Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $1,950