Work

SOI-based HF and VHF single-crystal silicon resonators with SUB-100 nanometer vertical capacitive gaps

Year: 2004

Type: conference-paper

Source: International Conference on Solid-State Sensors, Actuators and Microsystems

DOI: 10.1109/sensor.2003.1215604

Authors: S. Pourkamali, F. Ayazi

Institution: Georgia Institute of Technology

Language: English

Topic: Advanced MEMS and NEMS Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2112117206

FWCI: 12.82

Cites: 11

Cited by: 51

Related to: 10