Adhesive Bonding of InP∕InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene
Year: 2006
Type: article
Abstract: The process of bonding InP ∕ InGaAsP dies to a processed silicon-on-insulator wafer using sub- 300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.
DOI: 10.1149/1.2352045
Institutions: Ghent University, Eindhoven University of Technology
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2113580656