Year: 2012
Type: article
Abstract: We report a giant spin Hall effect in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip, we determine the spin Hall angle to be |θSHβ-W|=0.30±0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices, we independently determine |θSHβ-W|=0.33±0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.
Source: Applied Physics Letters
DOI: 10.1063/1.4753947
Authors: Chi-Feng Pai, Luqiao Liu, Y. Li, H. W. Tseng, D. C. Ralph, R. A. Buhrman
Institution: Cornell University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2113809410