Work

C and Si ion implantation and the origins of yellow luminescence in GaN

Year: 2004

Type: article

Source: Applied Physics A

DOI: 10.1007/s00339-003-2384-1

Authors: L. Dai, G.Z. Ran, J.C. Zhang, X.F. Duan, W.C. Lian, G.G. Qin

Institutions: Peking University, International Centre for Materials Physics, Academia Sinica

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W2114972076

FWCI: 0.739

Cites: 17

Cited by: 13

Related to: 10