Work

Radiation effects of e-beam fabricated submicron NMOS transistors

Year: 1982

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/edl.1982.25457

Authors: J.Y. Chen, R.C. Henderson, D.O. Patterson, R. Martin

Institutions: HRL Laboratories (United States), United States Naval Research Laboratory, United States Naval Academy

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2117345508

FWCI: 1.09

Cites: 7

Cited by: 10

Related to: 10