Year: 2015
Type: article
Abstract: It is found that several layer-phase group-III monochalcogenides, including GaS, GaSe, and InSe, are piezoelectric in their monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe, and InSe (2.06, 2.30, and 1.46 pm·V ™1 ) are of the same order of magnitude as previously discovered two-dimensional (2D) piezoelectric materials such as boron nitride (BN) and MoS 2 monolayers. This study therefore indicates that a strong piezoelectric response can be obtained in a wide range of two-dimensional materials with broken inversion symmetry. The co-existence of piezoelectricity and superior photo-sensitivity in these monochalcogenide monolayer semiconductors means they have the potential to allow for the integration of electromechanical and optical sensors on the same material platform.
Source: Nano Research
Authors: Wenbin Li, Ju Li
Institution: Massachusetts Institute of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2117945661